# diode example

$Device
{
   Region n_side 
   {
     material = Si
     doping = 1e18 doping_type = donor
   }

   Region p_side 
   {
     material  = Si
     doping = 1e18 doping_type = acceptor
   }

}


# Definition of  Simulation Models  and associated Boundary Conditions 
$Models
{ 
  model driftdiffusion
  { 
              
    options
    {
     simulation_name = dd
     physical_regions = all
    }


           
    physical_model electron_mobility
    {

      model = field_dependent
      

      low_field_model = doping_dependent   #Masetti  model for Si !!!

    }

    physical_model hole_mobility
    {
      model = field_dependent

      
      low_field_model = doping_dependent


    }


     physical_model recombination
     { 
       model  =  srh
     }                

    BC_Regions  
    {
      BC_Region anode
      {
        type = ohmic
        voltage = @Vb[0.0]
      }

      BC_Region cathode
      {
        type = ohmic
        voltage = 0.0
      }
 
    }   
  }  
}


# Definition of  Model-dependent Solver parameters
$Solver

{
  driftdiffusion
  {
    #nonlin_step_tol = 1e-6
  }

  sweep
  {
    variable = Vb
    start = 0.0
    stop = 1.2  
    steps = 120
    plot_data = true  #  to  write  data  for  each  step
    simulation = dd
  }
}



# Definition of  Model dependent physical parameters
$Physics
{
  driftdiffusion 
  {
    # use Fermi-Dirac statistics
    statistics =  FD
  }
}


# Definition of  model-indipendent parameters of the Simulation


$Simulation
{
  searchpath = ../../materials
  meshfile = diode_1D.msh 
  dimension = 1
  verbose = 2
  temperature = 300
  solve = sweep
  resultpath = out_diode_1D
  output_format = grace

  plot = (Ec, Ev, QFermi_e, QFermi_h, eDensity, hDensity, eCurrent, hCurrent, CurrentDensity, ContactCurrents, eMob, hMob)
}