# Description of  the  device physical regions
$Device
{
   Region substrate 
   {
     material = Si
     doping = 1e18 doping_type = acceptor
   }
   
   Region contact
   {
     material = Si
     doping = 5e19 doping_type = donor
   }

   Region oxide
   {
     material = SiO2
  
   }

}


# Definition of  Simulation Models  and associated Boundary Conditions 
$Models
{ 

  model driftdiffusion
  { 
              
    options
    {
     simulation_name = driftdiffusion

     physical_regions = all
    }

    physical_model recombination
    {
      model = srh
    }

    physical_model electron_mobility
    {

      model = field_dependent


      low_field_model = doping_dependent   #Masetti  model for Si !!!

    }




    BC_Regions  
    {
      BC_Region gate
      {
        type = schottky
	barrier_height = 3.0

        voltage = @Vg[0.0]
      }

      BC_Region source
      {
        type = ohmic

        voltage = 0.0
      }
 
      BC_Region drain
      {
        type = ohmic

        voltage = @Vd[0.5]
      }
   

    }   

  }  

}


# Definition of  Model-dependent Solver parameters
$Solver
{
  driftdiffusion
  {
    nonlinear_solver = tiber
    coupling = electrons
    ksp_type = bcgsl
    nonlin_max_it = 10
    nonlin_step_tol = 1e-3
    ls_max_step = 2
  }


  Sweep
  {
    sweep_drain
    {
      simulation = driftdiffusion  # sweep_gate
      variable = Vd
      start = 0.0 # 0.2
      stop = 1.0 
      steps = 5 # 4 
    }

    sweep_gate
    {
      variable = Vg
      start = -1.0
      stop = 0.5
      steps = 150 # 
      simulation = driftdiffusion
    }
  }
}



# Definition of  Model dependent physical parameters
$Physics
{
 
  driftdiffusion 
  {
    statistics = FD
  }

}


# Definition of  model-indipendent parameters of the Simulation


$Simulation
{
#  searchpath =    ../../materials   
  meshfile = mosfet.msh
  dimension = 2
  temperature = 300
  solve = (sweep_drain, sweep_gate)
  resultpath = output_transf_char_simple_way 
  #output_format = gmv
  output_format = vtk
  plot = (Ec, Ev, QFermi_e, QFermi_h, eDensity, hDensity, eCurrent, hCurrent,  NetRecombination, EField, ElPotential, ContactCurrents)
}