# diode example

# Description of  the  device physical regions

#  n   n    i   p   p

#  2 - 3  - 1 - 4 - 5
$Device
{

  Region well
  {
    material = GaN
  
    structure = wz
    x-growth-direction = (1,0,-1,0)
    y-growth-direction = (-1,2,-1,0)
    z-growth-direction = (0,0,0,1)	



   }
  

   Region  layer1
   {
     material = AlGaN
     x = 0.2
     structure = wz
     x-growth-direction = (1,0,-1,0)
     y-growth-direction = (-1,2,-1,0)
     z-growth-direction = (0,0,0,1)
     

     doping = 1e19 doping_type = donor doping_level = 0.025 g = 2
    
   
   }

  

   Region barrier1
   {
     material = AlGaN
     x = 0.2
     structure = wz
     x-growth-direction = (1,0,-1,0)
     y-growth-direction = (-1,2,-1,0)
     z-growth-direction = (0,0,0,1)


     doping = 1e15 doping_type = donor doping_level = 0.025 g = 2

   
   }


  

   Region barrier2
   {
     material = AlGaN
     x = 0.2
     structure = wz
     x-growth-direction = (1,0,-1,0)
     y-growth-direction = (-1,2,-1,0)
     z-growth-direction = (0,0,0,1)

   
     doping = 1e15 doping_type = donor doping_level = 0.025 g = 2

   }
   
   Region layer2
   {
     material = AlGaN
     x = 0.2
     structure = wz

     x-growth-direction = (1,0,-1,0)
     y-growth-direction = (-1,2,-1,0)
     z-growth-direction = (0,0,0,1)

    
     doping = 1e19 doping_type = acceptor doping_level = 0.17 g = 4 

   }
   
   

}


# Definition of  Simulation Models  and associated Boundary Conditions 
$Models 
{ 

  

  model macrostrain
  {

    options
    {          
      simulation_name = strain

      physical_regions = all
    }

    
    BC_Regions  
    {
      BC_Region substrate
      {
	type = substrate
	material = AlGaN
	x = 0.2
	structure = wz

	x-growth-direction = (1,0,-1,0)
	y-growth-direction = (-1,2,-1,0)
	z-growth-direction = (0,0,0,1)

      }
    }
  }



  model  driftdiffusion
  { 

    options
    {          
      simulation_name = dd
      
      physical_regions = all
    }

    physical_model recombination
    { 
      model = srh
     
    }                

    
    physical_model recombination
    { 
     model = direct
   
   
    }          
           
     

    physical_model electron_mobility
    { 
      model = field_dependent
      low_field_model = doping_dependent
     
    }                


    physical_model hole_mobility
    { 
      model = field_dependent
      low_field_model = doping_dependent
     
    }                


   BC_Regions  
    {

      BC_Region substrate  #cathode
      {


        type = ohmic

      }


      BC_Region anode
      {

	type = ohmic

	voltage = @bias
      }
 
    }   

  }


}  



# Definition of  Model-dependent Solver parameters
$Solver
{
 

 

  macrostrain
  {
    substrate = substrate
    lin_rel_tol = 1e-6  #   1e-5
    
  }

 
  driftdiffusion
  {
    nonlin_max_it = 15
    nonlin_rel_tol = 1e-12
    nonlin_step_tol = 1e-6
    ls_max_step = 4
  
  }


 sweep
 {
   simulation = dd
   variable = bias
   start = 0.0
   stop = 4.5 #5.0
   steps = 200 #20
   max_step = 0.5
 #  plot_data = true
 }



  
}



# Definition of  Model dependent physical parameters
$Physics
{
  
  macrostrain
  {
  
  }

  driftdiffusion 
  {
    strain_simulation = strain
    statistics = FD
  }
  

}


# Definition of  model-indipendent parameters of the Simulation
$Simulation
{
  #searchpath = ../../materials    
  meshfile = nanocolumn.msh  
  mesh_units = 1e-9
  dimension = 3
  temperature = 300

  solve = (strain, sweep)
  resultpath = output_nanocol_tecplot_tut_IV 
  output_format = vtk
  plot = (strain, polarization,Ec, Ev, QFermi_e, QFermi_h, eMob, hMob, EigenFunctions, EigenEnergy, EnergyLevels, eDensity, hDensity, CurrentDensity, eCurrent, hCurrent, ContactCurrents)
}