# diode example

$Device
{
   

   Region p_side 
   {
     material = Si
     doping = 1e18 doping_type = acceptor
   }

   Region n_side 
   {
     material = Si
     doping = 1e18 doping_type = donor
   }

}


# Definition of  Simulation Models  and associated Boundary Conditions 
$Models
{ 
  model driftdiffusion
  { 
              
    options
    {
      simulation_name = dd
      physical_regions = all
    } 

     physical_model recombination
     { 
       model  =  srh
     }               
 
    BC_Regions  
    {
      BC_Region anode
      {
        type = ohmic
        voltage = @Vb[0.0]
      }

      BC_Region cathode
      {
        type = ohmic
        voltage = 0.0
      }
 
    }   
  } 


  model thermal
  {

     options
    { 
      simulation_name = tt
      physical_regions = all
    }

    physical_model heat_source
    {

      model =  drift_diffusion_dissipation

      drift_diffusion_simulation = dd

    }

    BC_Regions
    {
        BC_Region anode
   	{
         type = heat_reservoir
         temperature = 300
   	}
       
        BC_Region cathode
   	{
	 type = heat_reservoir
         temperature = 300
	}
     }
  
    
 

   }

}


# Definition of  Model-dependent Solver parameters
$Solver

{
  sweep
  {
    simulation = (dd, tt)
    variable = Vb
    start = 0.0
    stop = 1.2
    steps = 12
  }
}



# Definition of  Model dependent physical parameters
$Physics
{
  driftdiffusion 
  {
    statistics =  FD
  }


}


# Definition of  model-indipendent parameters of the Simulation


$Simulation
{
  meshfile = tut_02.msh
  dimension = 1
  temperature = 300
  solve = sweep
  resultpath = output_tut2
  output_format = grace
  plot = (Ec, Ev, QFermi_e, QFermi_h, eDensity, hDensity, eCurrent, hCurrent, CurrentDensity, eMob, hMob, ContactCurrents,NetRecombination,thermal)

}