# diode example # Description of the device physical regions $Device { Region n_side { mat = Si doping = 1e18 doping_type = donor } Region p_side { mat = Si doping = 1e19 doping_type = acceptor } Region air { mat = Air } } # Definition of Simulation Models and associated Boundary Conditions $Models { model driftdiffusion { options { simulation_name = dd physical_regions = (n_side,p_side) } physical_model recombination { model = srh } physical_model thermoelectric_power { model = diffusivity_model } physical_model electron_mobility { model = doping_dependent } physical_model hole_mobility { model = doping_dependent } BC_Regions { BC_Region anode { type = ohmic voltage = @Vb[0.0] } BC_Region cathode { type = ohmic voltage = 0.0 } } } model thermal { options { simulation_name = tt physical_regions = all } physical_model heat_source { model = drift_diffusion_dissipation drift_diffusion_simulation = dd } BC_Regions { BC_Region reservoir { type = heat_reservoir temperature = 300 } BC_Region dissipator { r_surf = 0.5 type = thermal_surface_resistance temperature = 300 } } } } # Definition of Model-dependent Solver parameters $Solver { driftdiffusion { nonlin_max_it = 25 nonlin_step_tol = 1e-5 ls_max_step = 2 } selfconsistent { flavour = relaxation simulations = (dd,tt) abs_tolerance = 1e-5 monitor = true } sweep { simulation = selfconsistent variable = Vb start = 0.0 stop = 1.2 steps = 12 } } # Definition of Model dependent physical parameters $Physics { driftdiffusion { statistics = FD thermal_simulation = tt } } # Definition of model-indipendent parameters of the Simulation $Simulation { searchpath = . meshfile = tut_09.msh dimension = 2 temperature = 300 solve = sweep resultpath = output_tut9 symmetry = cylindrical output_format = vtk plot = (Ec, Ev, QFermi_e, QFermi_h, eDensity, hDensity, eMob, hMob, current, NetRecombination,Pn,Pp,thermal,ContactCurrents) }